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HUF76107P3
Data Sheet January 2003
20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFETTM process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA76107.
Features
* Logic Level Gate Drive * 20A, 30V * Ultra Low On-Resistance, rDS(ON) = 0.052 * Temperature Compensating PSPICE(R) Model * Temperature Compensating SABER(c) Model * Thermal Impedance SPICE Model * Thermal Impedance SABER Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
PART NUMBER HUF76107P3 PACKAGE TO-220AB BRAND 76107P
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
(c)2003 Fairchild Semiconductor Corporation
HUF76107P3 Rev. B1
HUF76107P3
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (R GS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 30 30 20 20 10.5 10 Figure 4 Figures 6, 17, 18 35 0.30 -40 to 150 300 260 W W/oC
oC oC oC
V V V A A A
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 150oC. TA = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Electrical Specifications
PARAMETER OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current
BVDSS IDSS
ID = 250A, VGS = 0V (Figure 12) VDS = 25V, VGS = 0V VDS = 25V, VGS = 0V, TC = 150oC
30 -
-
1 250 100
V A A nA
Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance
IGSS
VGS = 20V
VGS(TH) rDS(ON)
VGS = VDS, ID = 250A (Figure 11) ID = 20A, VGS = 10V (Figure 9, 10) ID = 10.5A, V GS = 5V (Figure 9) ID = 10A, VGS = 4.5V (Figure 9)
1 -
0.042 0.058 0.065
3 0.052 0.080 0.085
V
THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time tON td(ON) tr td(OFF) tf tOFF VDD = 15V, ID 10A, RL = 1.50, VGS = 4.5V, RGS = 33 (Figures 15, 21, 22) 14 66 16 22 120 57 ns ns ns ns ns ns R JC RJA (Figure 3) TO-220 3.3 62
oC/W oC/W
(c)2003 Fairchild Semiconductor Corporation
HUF76107P3 Rev. B1
HUF76107P3
Electrical Specifications
PARAMETER SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) 315 170 30 pF pF pF Qg(TOT) Qg(5) Qg(TH) Qgs Qgd VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V,ID 10.5A, RL = 1.43 Ig(REF) = 1.0mA (Figures 14, 19, 20) 8.6 4.7 0.35 1.00 2.40 10.3 5.7 0.42 nC nC nC nC nC tON td(ON) tr td(OFF) tf tOFF VDD = 15V, ID 20A, RL =0.75, VGS = 10V, RGS = 33 (Figures 16, 21, 22) 18 30 62 20 75 125 ns ns ns ns ns ns TA = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge SYMBOL VSD trr QRR TEST CONDITIONS ISD = 10.5A ISD = 10.5A, dISD/dt = 100A/s ISD = 10.5A, dISD/dt = 100A/s MIN TYP MAX 1.25 39 49 UNITS V ns nC
Typical Performance Curves Unless otherwise specified
1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (oC) 25
20 VGS=10V 15 VGS=4.5V 10
5
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
(c)2003 Fairchild Semiconductor Corporation
HUF76107P3 Rev. B1
HUF76107P3 Typical Performance Curves Unless otherwise specified (Continued)
2 1 THERMAL IMPEDANCE ZJC, NORMALIZED DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.1 t1 t2 SINGLE PULSE 0.01 10-5 10 -4 10-2 10-3 10-1 t, RECTANGULAR PULSE DURATION (s) NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10 0 101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500 TC = 25 oC IDM, PEAK CURRENT (A) FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 VGS = 10V I
=
I25
150 - TC 125
VGS = 5V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10 10-5 10-4 10-3 10-2 t, PULSE WIDTH (s) 10-1 10 0 101
FIGURE 4. PEAK CURRENT CAPABILITY
200 IAS, AVALANCHE CURRENT (A) TJ = MAX RATED TC = 25oC 100
200 100 ID, DRAIN CURRENT (A)
If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100s
10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 1
10 STARTING T J = 150oC
STARTING TJ = 25oC
BVDSS MAX = 30V
10ms 100 1 0.001 0.01 1 0.1 tAV, TIME IN AVALANCHE (ms) 10 100
10 VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 5. FORWARD BIAS SAFE OPERATING AREA FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
(c)2003 Fairchild Semiconductor Corporation
HUF76107P3 Rev. B1
HUF76107P3 Typical Performance Curves Unless otherwise specified (Continued)
30 25 ID, DRAIN CURRENT (A) 25oC 20 15 10 5 VDD = 15V 0 0 1 3 5 2 4 VGS, GATE TO SOURCE VOLTAGE (V) 6 0 0 1 2 3 4 I D, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 30 -40oC 150oC 25 20 15 VGS = 4V 10 VGS = 3.5V 5 VGS = 3V 5 6 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 10V VGS = 5V
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
VGS = 4.5V
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
90 ID = 20A rDS(ON), DRAIN TO SOURCE ON RESISTANCE (m) 80 70 60 50 40 30 2 ID = 5A ID = 12A
NORMALIZED DRAIN TO SOURCE ON RESISTANCE
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
2.00 1.75 1.50 1.25 1.00 0.75
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 20A
6 8 VGS, GATE TO SOURCE VOLTAGE (V) 4
10
0.50 -60
0
60
120
180
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
1.2 1.1 NORMALIZED GATE THRESHOLD VOLTAGE 1.0 0.9 0.8 0.7 0.6 -60 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS , ID = 250A
1.15 ID = 250A 1.10
1.05
1.00
0.95
0 60 120 TJ, JUNCTION TEMPERATURE (oC)
180
0.90 -60
0 60 120 TJ , JUNCTION TEMPERATURE (oC)
180
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
(c)2003 Fairchild Semiconductor Corporation
HUF76107P3 Rev. B1
HUF76107P3 Typical Performance Curves Unless otherwise specified (Continued)
600 500 C, CAPACITANCE (pF) 400 C ISS 300 200 100 CRSS 0 0 5 10 15 20 25 30 VDS , DRAIN TO SOURCE VOLTAGE (V) COSS VGS , GATE TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = C GS + C GD CRSS = CGD COSS CDS + CGD 10 VDD = 15V 8
6
4 WAVEFORMS IN DESCENDING ORDER: I D = 20A I D = 12A I D = 5A 0 2 4 6 8 10
2
0
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
100 VGS = 4.5V, VDD = 15V, ID = 10A, RL= 1.50 80 SWITCHING TIME (ns) tr SWITCHING TIME (ns)
100 VGS = 10V, VDD = 15V, ID = 20A, RL= 0.75 80 td(OFF)
60 td(OFF) tf
60 tf 40
tr
40
20 td(ON) 0 0 10 20 30 40 50 RGS, GATE TO SOURCE RESISTANCE ()
20
td(ON)
0
0
10
20
30
40
50
RGS, GATE TO SOURCE RESISTANCE ()
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Test Circuits and Waveforms
VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD
+
0V
IAS 0.01
0 tAV
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
(c)2003 Fairchild Semiconductor Corporation
HUF76107P3 Rev. B1
HUF76107P3 Test Circuits and Waveforms
(Continued)
VDS RL VDD VDS VGS = 10 VGS
+
Qg(TOT)
Qg(5) VDD VGS VGS = 1V 0 Qg(TH) Ig(REF) 0 VGS = 5V
DUT Ig(REF)
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
VDS
tON td(ON) RL VDS 90% tr
tOFF td(OFF) tf 90%
VGS
+
DUT RGS
VDD 0
10% 90%
10%
VGS VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 21. SWITCHING TIME TEST CIRCUIT
FIGURE 22. SWITCHING TIME WAVEFORMS
(c)2003 Fairchild Semiconductor Corporation
HUF76107P3 Rev. B1
HUF76107P3 PSPICE Electrical Model
SUBCKT HUF76107 2 1 3 ;
CA 12 8 4.2e-10 CB 15 14 4.9e-10 CIN 6 8 2.85e-10
10
REV June 1998
LDRAIN DPLCAP 5 RLDRAIN DBREAK 11 + EBREAK MWEAK MMED MSTRO CIN LSOURCE 8 RSOURCE RLSOURCE S1A 12 S1B CA 13 + EGS 6 8 EDS 13 8 S2A 14 13 S2B CB + 5 8 14 IT 15 17 RBREAK 18 RVTEMP 19 7 SOURCE 3 17 18 DBODY DRAIN 2 RSLC1 51 ESLC 50
RSLC2
5 51
EBREAK 11 7 17 18 35.7 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 3.61e-9 LSOURCE 3 7 3.61e-9 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 3.7e-3 RGATE 9 20 3.39 RLDRAIN 2 5 10 RLGATE 1 9 36.1 RLSOURCE 3 7 36.1 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 30e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A S1B S2A S2B 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD
GATE 1
ESG + LGATE EVTEMP RGATE + 18 22 9 20 6 8 EVTHRES + 19 8 6
RLGATE
-
-
VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*50),7))} .MODEL DBODYMOD D (IS = 2.8e-13 IKF = 5 RS = 1.37e-2 TRS1 = 2e-4 TRS2 = 2e-6 CJO = 4.9e-10 TT = 2.88e-8 M = 3.9e-1 XTI =4.75 ) .MODEL DBREAKMOD D (RS = 2.5e-1 TRS1 = 9.94e-4 TRS2 = 9.12e-7) .MODEL DPLCAPMOD D (CJO = 3.2e-10 IS = 1e-30 N = 10 M = 7.4e-1) .MODEL MMEDMOD NMOS (VTO = 2.07 KP = 1.25 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.39) .MODEL MSTROMOD NMOS (VTO = 2.4 KP = 19.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 1.8 KP =1e-1 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 33.9 RS=.1) .MODEL RBREAKMOD RES (TC1 = 9.94e-4 TC2 = 9.84e-8) .MODEL RDRAINMOD RES (TC1 = 3.9e-2 TC2 = 5.5e-5) .MODEL RSLCMOD RES (TC1 = 1e-4 TC2 = 3.2e-6) .MODEL RSOURCEMOD RES (TC1 = 1e-12 TC2 = 6e-6) .MODEL RVTHRESMOD RES (TC1 = -1.9e-3 TC2 = -5.96e-6) .MODEL RVTEMPMOD RES (TC1 = -1.4e-3 TC2 = 1e-10) .MODEL S1AMOD VSWITCH (RON = 1e-5 .MODEL S1BMOD VSWITCH (RON = 1e-5 .MODEL S2AMOD VSWITCH (RON = 1e-5 .MODEL S2BMOD VSWITCH (RON = 1e-5 .ENDS ROFF = 0.1 ROFF = 0.1 ROFF = 0.1 ROFF = 0.1 VON = -4.2 VOFF= -0.5) VON = -0.5 VOFF= -4.2) VON = -0.8 VOFF= 0.0) VON = 0.0 VOFF= -0.8)
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
(c)2003 Fairchild Semiconductor Corporation
+
DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD
-
RDRAIN 21 16
-
VBAT +
8 22 RVTHRES
HUF76107P3 Rev. B1
HUF76107P3 SABER Electrical Model
nom temp=25 deg c
REV Junel 1998 template huf76107 n2,n1,n3 electrical n2,n1,n3 { var i iscl d..model dbodymod = (is=2.8e-13, xti=4.75, cjo=4.9e-10,tt=2.88e-8, m=3.9e-1) d..model dbreakmod = () d..model dplcapmod = (cjo=3.2e-10,is=1e-30,n=10,m=7.4e-1) m..model mmedmod = (type=_n,vto=2.07,kp=1.25,is=1e-30, tox=1) m..model mstrongmod = (type=_n,vto=2.4,kp=19.5,is=1e-30, tox=1) m..model mweakmod = (type=_n,vto=1.8,kp=1e-1,is=1e-30, tox=1) sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4.2,voff=-0.5) sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-0.5,voff=-4.2) sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-0.8,voff=0.0) sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.0,voff=-0.8) c.ca n12 n8 = 4.2e-10 c.cb n15 n14 = 4.9e-10 c.cin n6 n8 = 2.85e-10 d.dbody n7 n71 = model=dbodymod d.dbreak n72 n11 = model=dbreakmod d.dplcap n10 n5 = model=dplcapmod i.it n8 n17 = 1 l.ldrain n2 n5 = 1e-9 l.lgate n1 n9 = 3.61e-9 l.lsource n3 n7 = 3.61e-9
GATE 1 RLGATE CIN ESG + LGATE EVTEMP RGATE + 18 22 9 20 6 MSTRO 8
30v LL Ultrafet
LDRAIN DPLCAP 10 RSLC1 51 RSLC2 ISCL RLDRAIN RDBREAK 72 DBREAK 11 MWEAK DBODY MMED EBREAK + 17 18 71 RDBODY 5 DRAIN 2
6 8 EVTHRES + 19 8
50 RDRAIN 21 16
RSOURCE
LSOURCE 7 RLSOURCE
SOURCE 3
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u res.rbreak n17 n18 = 1, tc1=9.94e-4,tc2=-9.84e-8 res.rdbody n71 n5 =1.37e-2, tc1=2e-4, tc2=2e-6 res.rdbreak n72 n5 =2.5e-1, tc1=9.94e-4, tc2=9.12e-7 res.rdrain n50 n16 = 3.7e-3, tc1=3.9e-2,tc2=5.5e-5 res.rgate n9 n20 = 3.39 res.rldrain n2 n5 = 10 res.rlgate n1 n9 = 36.1 res.rlsource n3 n7 = 36.1 res.rslc1 n5 n51 = 1e-6, tc1=1e-4,tc2=3.2e-6 res.rslc2 n5 n50 = 1e3 res.rsource n8 n7 = 30e-3, tc1=1e-12,tc2=6e-6 res.rvtemp n18 n19 = 1, tc1=-1.4e-3,tc2=1e-10 res.rvthres n22 n8 = 1, tc1=-1.9e-3,tc2=-5.96e-6 spe.ebreak n11 n7 n17 n18 = 35.7 spe.eds n14 n8 n5 n8 = 1 spe.egs n13 n8 n6 n8 = 1 spe.esg n6 n10 n6 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 spe.evthres n6 n21 n19 n8 = 1 sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod v.vbat n22 n19 = dc=1
S1A 12 S1B CA 13 13 8
S2A 14 13 S2B
15
RBREAK 17 18 RVTEMP
CB + 6 8 EDS 5 8 14 IT
19
+ EGS
VBAT +
-
-
8 RVTHRES
22
equations { i (n51->n50) +=iscl iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/50))**7 )) } }
(c)2003 Fairchild Semiconductor Corporation
HUF76107P3 Rev. B1
HUF76107P3 SPICE Thermal Model
REV June1998 HUF76107 CTHERM1 th 6 5.0e-5 CTHERM2 6 5 9.0e-4 CTHERM3 5 4 1.3e-3 CTHERM4 4 3 1.3e-3 CTHERM5 3 2 2.2e-2 CTHERM6 2 tl 7.9e-3 RTHERM1 th 6 2.0e-4 RTHERM2 6 5 6.0e-3 RTHERM3 5 4 3.5e-2 RTHERM4 4 3 8.5e-1 RTHERM5 3 2 5.1e-1 RTHERM6 2 tl 1
RTHERM1 CTHERM1 th JUNCTION
6
RTHERM2
CTHERM2
5
RTHERM3
CTHERM3
SABER Thermal Model
SABER thermal model HUF76107 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 5.0e-5 ctherm.ctherm2 6 5 = 9.0e-4 ctherm.ctherm3 5 4 = 1.3e-3 ctherm.ctherm4 4 3 = 1.3e-3 ctherm.ctherm5 3 2 = 2.2e-2 ctherm.ctherm6 2 tl = 7.9e-3 rtherm.rtherm1 th 6 = 2.0e-4 rtherm.rtherm2 6 5 = 6.0e-3 rtherm.rtherm3 5 4 = 3.5e-2 rtherm.rtherm4 4 3 = 8.5e-1 rtherm.rtherm5 3 2 = 5.1e-1 rtherm.rtherm6 2 tl = 1 }
4
RTHERM4
CTHERM4
3
RTHERM5
CTHERM5
2
RTHERM6
CTHERM6
tl
CASE
(c)2003 Fairchild Semiconductor Corporation
HUF76107P3 Rev. B1
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I2

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